MSCSM120VR1M16CT3AG

FET, MOSFET Arrays Overview

The MSCSM120VR1M16CT3AG is a Vienna rectifier silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates SiC MOSFETs and Schottky diodes within an isolated package designed for direct heatsink mounting. The device features a 1200V drain-source voltage rating and supports continuous drain currents of 173A at 25°C case temperature, decreasing to 138A at 80°C. Key electrical parameters include a maximum on-resistance of 16 mΩ and a total gate charge of 464 nC. The module incorporates an internal NTC thermistor for thermal monitoring and utilizes an Aluminum Nitride substrate to enhance thermal performance.

FET, MOSFET Arrays Feature Summary

• Integrates low RDS(on) SiC Power MOSFETs with high-temperature performance capabilities
• Features SiC Schottky Diodes exhibiting zero reverse recovery and zero forward recovery characteristics
• Includes an internal thermistor for precise temperature monitoring and Kelvin source connections for simplified drive circuitry
• Utilizes an Aluminum Nitride substrate to achieve improved thermal dissipation and low junction-to-case resistance

FET, MOSFET Arrays Applications

• Power factor correction systems
• Switched mode power supplies
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004703A when sourcing components to ensure alignment with current manufacturing specifications. Confirm that handling procedures strictly adhere to electrostatic discharge precautions due to component sensitivity. Ensure that multiple input and output terminals are correctly shorted according to the pinout requirements specified in the official documentation prior to integration into the final assembly.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-efficiency rectification and converters operating at high frequencies. The device is suitable for designs needing direct mounting to heatsinks with isolated packaging. Consider the thermal management requirements associated with the 173A continuous current rating and the necessity for appropriate gate drive configurations utilizing the provided Kelvin source terminals for optimal switching performance.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module portfolio, specifically engineered for Vienna rectifier topologies. It represents a solution for high-power density applications where efficiency and thermal stability are critical. The module combines advanced SiC technology with robust packaging to support demanding industrial and commercial power conversion environments.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the function of the internal thermistor?

The internal NTC thermistor provides temperature monitoring capabilities for the module.

How does the SiC Schottky Diode behave during switching?

The integrated SiC Schottky Diodes exhibit zero reverse recovery and zero forward recovery, along with temperature-independent switching behavior.

What substrate material is used for thermal performance?

The module uses an Aluminum Nitride (AlN) substrate to improve thermal performance compared to standard materials.