MSCSM120VR1M16CTPAG

$751.96

Description：MOSFET 6N-CH 1200V 171A
Series：-

SKU:d61a03bc9138 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120VR1M16CTPAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1200V 171A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120VR1M16CTPAG

Description：MOSFET 6N-CH 1200V 171A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：171A (Tc)
Rds On (Max) @ Id, Vgs：16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：6040pF @ 1000V
Power - Max：728W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120VR1M16CTPAG

MSCSM120VR1M16CTPAG

FET, MOSFET Arrays Overview

The MSCSM120VR1M16CTPAG is a triple Vienna rectifier silicon carbide power module manufactured by Microchip Technology. It integrates three N-channel SiC MOSFETs and associated Schottky diodes within an isolated SP6-P package. The device supports a drain-source voltage of 1200 V and delivers a continuous drain current of 171 A at 25 °C case temperature. Key electrical parameters include a maximum on-resistance of 16 mΩ, a gate threshold voltage ranging from 1.8 V to 2.8 V, and a total gate charge of 464 nC. The module operates with a junction temperature range of -40 °C to 175 °C.

FET, MOSFET Arrays Feature Summary

Triple Vienna rectifier configuration integrating SiC MOSFETs and Schottky diodes
Aluminum Nitride substrate for improved thermal performance
Internal thermistor for temperature monitoring
Kelvin source connection for easy drive

FET, MOSFET Arrays Applications

Power factor correction
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (DS00004704A) against the ordered component to ensure alignment with the latest technical specifications. Confirm that the SP6-P package dimensions and mounting torque requirements match the mechanical design constraints of the target application. Ensure electrostatic discharge handling procedures are strictly followed during installation.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and high-efficiency rectification. The low junction-to-case thermal resistance facilitates direct heatsink mounting. Verify that the gate drive circuitry accommodates the specified gate-source voltage limits and internal gate resistance values to optimize switching performance.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's Silicon Carbide power module portfolio, designed for high-power density systems. It utilizes advanced SiC technology to reduce switching losses compared to traditional silicon devices. The triple configuration is specifically optimized for Vienna rectifier topologies in industrial power conversion.