MSCSM170AM029T6LIAG

Description：SIC MOSFET
Series：-

SKU:ef29159b0510 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170AM029T6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SIC MOSFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170AM029T6LIAG

Description：SIC MOSFET
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170AM029T6LIAG

MSCSM170AM029T6LIAG

FET, MOSFET Arrays Overview

The MSCSM170AM029CT6LIAG is a very low stray inductance phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a 1700 V drain-source voltage rating and a continuous drain current of 676 A at 25 °C case temperature. The device integrates an internal NTC thermistor for temperature monitoring and utilizes an aluminum nitride substrate to improve thermal performance. Key electrical characteristics include a maximum on-resistance of 3.75 mΩ, a total gate charge of 2136 nC, and a junction-to-case thermal resistance of 0.05 °C/W.

FET, MOSFET Arrays Feature Summary

Integrated SiC Schottky diode with zero reverse recovery and zero forward recovery characteristics
Very low stray inductance design utilizing M4 and M5 power connectors alongside M2.5 signal connectors
Internal NTC thermistor embedded within the module for precise temperature monitoring
Aluminum nitride substrate construction providing improved thermal dissipation capabilities

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the exact part number against official Microchip documentation before procurement. Confirm that the ordering suffix matches the required specifications, as variations may exist within the product family. Ensure compliance with electrostatic discharge handling procedures during storage and installation. Cross-reference datasheet revision history to confirm the latest technical parameters are being utilized for design validation.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency converters requiring outstanding performance at high frequencies. The isolated package allows direct mounting to heatsinks, simplifying mechanical integration. Evaluate the low junction-to-case thermal resistance for applications demanding efficient heat transfer. Consider the positive temperature coefficient of the forward voltage for reliable parallel operation in high-current scenarios.

FET, MOSFET Arrays Part Context

This device belongs to the SP6 Low Inductance Power Module series from Microchip Technology. It is designed specifically for phase leg configurations in high-power semiconductor applications. The module architecture supports robust operation across a wide operating junction temperature range, ensuring reliability in demanding industrial and automotive environments.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides or contact technical support for verified alternative part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without reviewing specific datasheet parameters.

FET, MOSFET Arrays FAQ

What is the maximum recommended junction temperature under switching conditions?

The recommended junction temperature under switching conditions ranges from -40 °C up to TJmax minus 25 °C.

How does the device handle reverse recovery characteristics?

The integrated SiC Schottky diode exhibits zero reverse recovery and zero forward recovery, contributing to temperature-independent switching behavior.