MSCSM170AM039CT6AG

$1,103.84

Description：MOSFET 2N-CH 1700V 523A
Series：-

SKU:95dec83fcccc Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170AM039CT6AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 523A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170AM039CT6AG

Description：MOSFET 2N-CH 1700V 523A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：523A (Tc)
Rds On (Max) @ Id, Vgs：5mOhm @ 270A, 20V
Vgs(th) (Max) @ Id：3.3V @ 22.5mA
Gate Charge (Qg) (Max) @ Vgs：1602nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：29700pF @ 1000V
Power - Max：2.4kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

FET, MOSFET Arrays Overview

The MSCSM170AM039CT6AG is a phase leg silicon carbide (SiC) power module rated at 1700 V and 523 A. It integrates an N-channel SiC MOSFET with a continuous drain current of 523 A at 25 °C and a maximum on-resistance of 5 mΩ. The module includes a complementary SiC Schottky diode with a forward voltage of 1.8 V at 25 °C. Key electrical parameters include a junction-to-case thermal resistance of 0.063 °C/W for the MOSFET, operating junction temperatures up to 175 °C, and an isolation voltage of 4000 V RMS.

FET, MOSFET Arrays Feature Summary

Integrated Kelvin source terminal for simplified gate drive circuitry
Aluminum Nitride (AlN) substrate providing enhanced thermal conductivity
Internal thermistor for precise junction temperature monitoring
Low stray inductance design optimized for high-speed switching

FET, MOSFET Arrays Applications

EV motor and traction drive systems
Welding converters
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00003969A against your design requirements. Confirm that the M5 mounting torque specifications are strictly adhered to during installation. Ensure electrostatic discharge precautions are implemented throughout handling. Cross-reference the absolute maximum ratings with your system's peak transient conditions to prevent device failure.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency converters requiring stable temperature behavior and direct heatsink mounting. The isolated package design facilitates low junction-to-case thermal resistance. Consider the integrated Kelvin source if minimizing gate loop inductance is critical for your switching frequency targets.

FET, MOSFET Arrays Part Context

This device belongs to Microchip's SP6 series of discrete semiconductor modules. It utilizes a screw-mount configuration designed for robust mechanical stability. The packaging supports high-power density applications by combining advanced SiC technology with efficient thermal management structures within a standardized form factor.