MSCSM170AM15CT3AG

$388.93

Description：MOSFET 2N-CH 1700V 181A
Series：-

SKU:3c4dd612521e Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170AM15CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 181A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170AM15CT3AG

Description：MOSFET 2N-CH 1700V 181A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：181A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id：3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs：534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：9900pF @ 1000V
Power - Max：862W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170AM15CT3AG

MSCSM170AM15CT3AG

FET, MOSFET Arrays Overview

The MSCSM170AM15CT3AG is a 1700 V, 181 A phase leg silicon carbide (SiC) MOSFET power module. It features an internal SiC Schottky diode and operates within a junction temperature range of -40 °C to 175 °C. The device utilizes an Aluminum Nitride substrate for thermal management and includes an integrated NTC thermistor for temperature monitoring. Electrical characteristics include a typical RDS(on) of 11.7 mΩ at 25 °C and a forward voltage of 1.5 V for the diode.

FET, MOSFET Arrays Feature Summary

Integrated Kelvin source pin configuration for simplified gate drive circuitry
Internal negative temperature coefficient thermistor for precise junction temperature monitoring
Aluminum Nitride substrate construction providing enhanced thermal conductivity and low junction-to-case resistance
Low stray inductance design supporting high-frequency switching operations

FET, MOSFET Arrays Applications

Induction heating systems
Welding equipment
Solar inverters
Electric vehicle motor drives
Traction drive applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or direct channels. Confirm datasheet revision DS00003932A matches the delivered hardware. Ensure electrostatic discharge handling protocols are strictly followed during storage and installation. Validate that all specified pin shorting requirements are met before integration into the final assembly.

FET, MOSFET Arrays Selection Notes

Select this module when designing high-efficiency converters requiring robust performance at elevated frequencies. The isolated package allows direct mounting to heatsinks, reducing system complexity. Evaluate thermal impedance curves against specific load profiles to ensure operation remains within recommended junction temperature limits under continuous switching conditions.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's rugged silicon carbide power solutions portfolio designed as alternatives to traditional silicon IGBTs. It supports two-level topologies with reduced part counts. The SP6P packaging format provides a low-profile solution suitable for compact industrial and automotive power electronics designs.