MSCSM170DUM058AG

$487.48

Description：MOSFET 2N-CH 1700V 353A
Series：-

SKU:0d9f03cd6dc5 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170DUM058AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 353A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170DUM058AG

Description：MOSFET 2N-CH 1700V 353A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：353A (Tc)
Rds On (Max) @ Id, Vgs：7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id：3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：19800pF @ 1000V
Power - Max：1642W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170DUM058AG

MSCSM170DUM058AG

FET, MOSFET Arrays Overview

The MSCSM170DUM058AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1700V and 353A. It features an RDS(on) of 7.5 mΩ maximum, with a typical value of 5.8 mΩ at TJ = 25 °C. The device supports a continuous drain current of 281 A at TC = 80 °C and a pulsed current of 700 A. Operating junction temperature ranges from -40 °C to 175 °C. Thermal resistance from junction to case is 0.09 °C/W. Gate-source voltage limits are -10 V to +23 V.

FET, MOSFET Arrays Feature Summary

Kelvin source connection for simplified gate drive circuitry
Aluminum Nitride substrate for enhanced thermal dissipation
Low stray inductance design for high-frequency operation
Integrated internal gate resistance

FET, MOSFET Arrays Applications

AC switches
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision status before integration, as updates may affect electrical parameters or package dimensions. Confirm that the M5 power connector torque specifications align with your assembly tooling capabilities. Ensure electrostatic discharge handling protocols are strictly followed during installation to prevent device damage due to sensitivity.

FET, MOSFET Arrays Selection Notes

Select this component when high-voltage isolation and low on-resistance are required in a compact form factor. The dual common source configuration simplifies half-bridge driving requirements. Evaluate the thermal management solution against the 0.09 °C/W junction-to-case resistance to ensure reliable operation within the specified temperature range under expected load conditions.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's SiC power module family, designed for high-efficiency power conversion. It utilizes silicon carbide technology to achieve superior performance compared to traditional silicon devices. The isolated package allows direct mounting to heatsinks, facilitating efficient thermal transfer in industrial and commercial power electronics applications.