FET, MOSFET Arrays MSCSM170DUM23T3AG product image

MSCSM170DUM23T3AG

$161.22
  • Description:MOSFET 2N-CH 1700V 124A SP3F
  • Series:-

SKU:91e2c6a40184 Category: Brand:

  
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MSCSM170DUM23T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 124A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170DUM23T3AG

  • Description:MOSFET 2N-CH 1700V 124A SP3F
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Dual) Common Source
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C:124A (Tc)
  • Rds On (Max) @ Id, Vgs:22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id:3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:6600pF @ 1000V
  • Power - Max:602W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP3F
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM170DUM23T3AG

MSCSM170DUM23T3AG

FET, MOSFET Arrays Overview

The MSCSM170DUM23T3AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1700V and 124A. It features an aluminum nitride substrate for thermal management, Kelvin sources for low-inductance driving, and an integrated NTC thermistor. Key electrical parameters include a maximum drain-source voltage of 1700V, continuous drain current of 124A at 25°C, typical on-resistance of 17.5mΩ, total gate charge of 356nC, and junction-to-case thermal resistance of 0.25°C/W.

FET, MOSFET Arrays Feature Summary

  • Kelvin source configuration enables easy drive with low stray inductance
  • Aluminum nitride substrate provides improved thermal performance
  • Integrated internal thermistor allows for temperature monitoring
  • Isolated package design supports direct mounting to heatsinks

FET, MOSFET Arrays Applications

  • AC switches

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision date against the manufacturer's official records before finalizing specifications. Confirm that the ordering suffix matches the exact pinout and terminal configuration required by your PCB layout. Ensure electrostatic discharge handling procedures are strictly followed during assembly to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component when high-frequency operation and robust thermal performance are required. The dual common source topology suits applications needing isolated switching control. Evaluate the 1700V rating against system voltage peaks and ensure the 124A current capacity aligns with load requirements under specified case temperatures.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's silicon carbide power module lineup, designed for high-efficiency power conversion. It utilizes SiC technology to achieve superior switching speeds and lower conduction losses compared to traditional silicon devices. The SP1F package format facilitates integration into compact industrial power systems.

FET, MOSFET Arrays Replacement Considerations

Consult the manufacturer's cross-reference documentation for verified substitute part numbers. Verify compatibility regarding pin assignments, thermal characteristics, and electrical ratings before implementing any alternative components in existing designs.

MSCSM170DUM23T3AGMSCSM170DUM23T3AG
$161.22
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