MSCSM170HM087CAG

$1,083.24

Description：MOSFET 4N-CH 1700V 238A
Series：-

SKU:9b085168fb92 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170HM087CAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V 238A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170HM087CAG

Description：MOSFET 4N-CH 1700V 238A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：238A (Tc)
Rds On (Max) @ Id, Vgs：11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id：3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：13200pF @ 1000V
Power - Max：1.114kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170HM087CAG

MSCSM170HM087CAG

FET, MOSFET Arrays Overview

The MSCSM170HM087CAG is a 1700 V/238 A full bridge silicon carbide (SiC) power module. It integrates SiC MOSFETs and Schottky diodes with Kelvin sources for easy drive, low stray inductance, and M5 power connectors. The device utilizes an Aluminum Nitride substrate for improved thermal performance and offers direct mounting to heatsinks. Key electrical parameters include a drain-source on-resistance of 11.3 mΩ at 25 °C, a gate threshold voltage range of 1.8 V to 3.2 V, and a maximum operating junction temperature of 175 °C.

FET, MOSFET Arrays Feature Summary

Integrates SiC Power MOSFETs and Schottky Diodes with zero reverse and forward recovery characteristics.
Features Kelvin source connections for simplified driver integration and low stray inductance design.
Utilizes an Aluminum Nitride substrate to enhance thermal dissipation and reduce junction-to-case resistance.
Provides positive temperature coefficient on forward voltage for stable parallel operation.

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00003994A against your design requirements. Confirm that handling procedures address electrostatic discharge sensitivity as specified by the manufacturer. Ensure compatibility with M5 terminal torque specifications during installation. Cross-reference isolation voltage ratings with system safety standards before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for high-frequency applications requiring low switching losses and high efficiency. The SP6P package facilitates direct heatsink mounting with isolated terminals. Evaluate thermal impedance curves to ensure adequate cooling for the intended duty cycle. Consider the internal gate resistance values when designing the gate driver circuit for optimal switching speed control.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's Silicon Carbide power module family, designed for high-power density systems. It complements other SP6P variants offering different current ratings or topologies. The series supports industrial and automotive applications demanding robust performance under high thermal stress and high voltage conditions.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for equivalent SP6P packages. Verify pinout compatibility and thermal resistance values when considering alternatives from other manufacturers.