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MSCSM170HRM075NG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V/1200V 337A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM170HRM075NG
- Description：MOSFET 4N-CH 1700V/1200V 337A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Three Level Inverter)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1700V (1.7kV), 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：337A (Tc), 317A (Tc)
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id：3.2V @ 15mA, 2.8V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs：1068nC @ 20V, 928nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：19800pF @ 1000V, 12100pF @ 1000V
- Power - Max：1.492kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM170HRM075NG
FET, MOSFET Arrays Overview
The MSCSM170HRM075NG is a T-type Silicon Carbide (SiC) MOSFET power module featuring a phase leg rated at 1700V and 337A, alongside a dual common source configuration rated at 1200V and 317A. The device utilizes an Si3N4 substrate for thermal management and includes Kelvin sources for drive optimization. It supports direct heatsink mounting with an isolated package design.
FET, MOSFET Arrays Feature Summary
- Integrated Kelvin source terminals facilitate simplified gate drive circuitry.
- Low stray inductance architecture enhances high-frequency switching performance.
- Si3N4 substrate provides improved thermal conductivity and electrical isolation.
FET, MOSFET Arrays Applications
- Solar inverters
- Three-level inverters
- Uninterruptible power supplies
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision DS00004926A against your procurement records to ensure component compatibility. Confirm that handling procedures account for electrostatic discharge sensitivity as specified in the manufacturer documentation prior to installation.
FET, MOSFET Arrays Selection Notes
Select this module for applications requiring high-voltage isolation and efficient thermal dissipation. The combination of low on-resistance and robust thermal characteristics makes it suitable for demanding power conversion environments where reliability under high current loads is critical.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's T-type SiC MOSFET power module family. It integrates multiple silicon carbide switches into a single compact package, designed to replace traditional silicon-based solutions in high-efficiency power electronics systems.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult official Microchip resources for potential cross-references or updated product line replacements.
FET, MOSFET Arrays FAQ
What is the maximum operating junction temperature?
The recommended operating junction temperature range extends up to 175 °C.
Does the module include internal gate resistance?
Yes, the device incorporates internal gate resistance to assist with switching control.
Is the package electrically isolated?
Yes, the module features an isolated package allowing direct mounting to a heatsink.
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