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MSCSM170HRM11NG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V/1200V 226A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM170HRM11NG
- Description：MOSFET 4N-CH 1700V/1200V 226A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Three Level Inverter)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1700V (1.7kV), 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：226A (Tc), 163A (Tc)
- Rds On (Max) @ Id, Vgs：11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id：3.2V @ 10mA, 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs：712nC @ 20V, 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：13200pF @ 1000V, 6040pF @ 1000V
- Power - Max：1.012kW (Tc), 662W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM170HRM11NG
FET, MOSFET Arrays Overview
The MSCSM170HRM11NG is a T-type Silicon Carbide (SiC) MOSFET power module featuring a phase leg with 1700V, 226A ratings and a dual common source configuration rated at 1200V, 163A. It utilizes an Si3N4 substrate for thermal management and includes Kelvin sources for drive optimization.
FET, MOSFET Arrays Feature Summary
- Integrated Kelvin source terminals to facilitate low-inductance gate driving
- Utilizes silicon nitride (Si3N4) substrates to enhance thermal conductivity
- Designed for direct mounting to heatsinks with isolated package construction
FET, MOSFET Arrays Applications
- Solar inverters
- Three-level inverters
- Uninterruptible power supplies
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision DS00004934A against your design requirements. Confirm that the M5 terminal torque specifications are strictly adhered to during assembly to ensure reliable electrical contact and mechanical stability within the operating temperature range.
FET, MOSFET Arrays Selection Notes
Select this component when high-frequency operation and low switching losses are critical. The dual voltage architecture allows for flexible circuit topologies. Ensure adequate cooling solutions are implemented to maintain junction temperatures within the specified -40°C to 175°C operational limits.
FET, MOSFET Arrays Part Context
This device belongs to Microchip's T-type SiC MOSFET power module family. It combines high-voltage phase legs with lower-voltage common source configurations in a single compact package, targeting advanced power conversion systems requiring high efficiency and thermal robustness.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are documented in the official datasheet.
FET, MOSFET Arrays FAQ
What is the maximum recommended junction temperature under switching conditions?
The recommended junction temperature under switching conditions is TJmax minus 25°C.
Does the module include Kelvin source connections?
Yes, the module features Kelvin sources designed for easy and low-inductance gate driving.
What material is used for the substrate?
The module uses a silicon nitride (Si3N4) substrate to improve thermal performance compared to traditional materials.
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