FET, MOSFET Arrays MSCSM170HRM233AG product image

MSCSM170HRM233AG

$228.68
  • Description:MOSFET 4N-CH 1700V/1200V 124A
  • Series:-

SKU:4edca3236688 Category: Brand:

  
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MSCSM170HRM233AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V/1200V 124A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170HRM233AG

  • Description:MOSFET 4N-CH 1700V/1200V 124A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel (Three Level Inverter)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1700V (1.7kV), 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:124A (Tc), 89A (Tc)
  • Rds On (Max) @ Id, Vgs:22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id:3.2V @ 5mA, 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs:356nC @ 20V, 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:6600pF @ 1000V, 3020pF @ 1000V
  • Power - Max:602W (Tc), 395W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM170HRM233AG

MSCSM170HRM233AG

FET, MOSFET Arrays Overview

The MSCSM170HRM233AG is a T-type Silicon Carbide (SiC) MOSFET power module containing a 1700V phase leg and dual common source devices. The 1700V phase leg supports a continuous drain current of 124A at 25°C with an on-resistance of 22.5mΩ. The dual common source section provides two 1200V, 89A SiC MOSFETs sharing a common source terminal. The module utilizes an AlN substrate for thermal management and features low stray inductance.

FET, MOSFET Arrays Feature Summary

  • T-type configuration integrating high-voltage phase legs with dual common source outputs
  • AlN substrate construction providing improved thermal performance and low junction-to-case resistance
  • Ultra-low loss switching characteristics enabled by Silicon Carbide technology
  • Solderable terminals designed for both power and signal connections to facilitate PCB mounting

FET, MOSFET Arrays Applications

  • Solar inverters
  • Three-level inverters
  • Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004924A when sourcing components. Confirm that the ordering suffix AG corresponds to RoHS compliance requirements. Ensure proper electrostatic discharge handling procedures are followed during installation due to device sensitivity. Cross-reference pinout diagrams to ensure correct shorting of pins 1/2/3, 10/11/12, 5/6/7/8, and 21/22/23/24.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring mixed voltage levels within a single package. The 1700V phase leg suits high-bus voltage systems, while the 1200V dual common source devices offer flexibility for auxiliary or lower-voltage stages. Evaluate thermal impedance curves against system heat sink capabilities to maintain junction temperatures within the recommended operating range under switching conditions.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's T-type SiC MOSFET power module family. It combines high-voltage switching capabilities with integrated dual common source configurations. The SP3F package design allows for direct mounting to heatsinks, supporting high-power density designs in industrial and renewable energy conversion systems.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence with other modules lacking identical T-type architectures or matching voltage ratings.

MSCSM170HRM233AGMSCSM170HRM233AG
$228.68
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