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MSCSM170HRM451AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V/1200V 64A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM170HRM451AG
- Description：MOSFET 4N-CH 1700V/1200V 64A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Three Level Inverter)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1700V (1.7kV), 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：64A (Tc), 89A (Tc)
- Rds On (Max) @ Id, Vgs：45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：3.2V @ 2.5mA, 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：178nC @ 20V, 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：3300pF @ 1000V, 3020pF @ 1000V
- Power - Max：319W (Tc), 395W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM170HRM451AG
FET, MOSFET Arrays Overview
The MSCSM170HRM451AG is a T-type Silicon Carbide (SiC) MOSFET power module containing a phase leg with 1700V, 64A SiC MOSFETs and dual common source 1200V, 89A SiC MOSFETs. It features an AlN substrate for improved thermal performance and low stray inductance. The device supports direct mounting to heatsinks via isolated packaging and includes solderable terminals for both power and signal connections.
FET, MOSFET Arrays Feature Summary
- High-speed switching with low RDS(on) and ultra-low loss characteristics
- Very low stray inductance design
- AlN substrate for enhanced thermal management
- Isolated package allowing direct heatsink mounting
FET, MOSFET Arrays Applications
- Solar inverters
- Three-level inverters
- Uninterruptible power supplies
FET, MOSFET Arrays Procurement Notes
Verify the datasheet revision date and part number against official Microchip Technology records before procurement. Confirm that ordering suffixes do not alter electrical functions unless explicitly documented. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent device damage.
FET, MOSFET Arrays Selection Notes
Select this module for high-frequency operation requiring high efficiency and power density. Consider the low junction-to-case thermal resistance and isolated package for simplified thermal management. Evaluate the specific voltage and current ratings of the mixed 1700V and 1200V legs against application requirements.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's T-type SiC MOSFET power module family. It integrates multiple SiC MOSFETs into a single compact package designed for robust performance in demanding power conversion environments. The module utilizes advanced packaging techniques to minimize parasitic effects and improve thermal dissipation.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology directly for compatible alternatives or updated product recommendations.
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