MSCSM170TAM45CT3AG

$385.65

Description：MOSFET 6N-CH 1700V 64A
Series：-

SKU:24d26ccd6dff Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170TAM45CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1700V 64A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170TAM45CT3AG

Description：MOSFET 6N-CH 1700V 64A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Rds On (Max) @ Id, Vgs：45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id：3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3300pF @ 1000V
Power - Max：319W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170TAM45CT3AG

MSCSM170TAM45CT3AG

FET, MOSFET Arrays Overview

The MSCSM170TAM45CT3AG is a triple phase bridge silicon carbide (SiC) MOSFET power module rated at 1700 V. It integrates three SiC MOSFETs and three SiC Schottky diodes in an isolated package. Key electrical parameters include a continuous drain current of 64 A at 25 °C, a maximum on-resistance of 45 mΩ, and a gate threshold voltage range of 1.8 V to 3.2 V. The device features low stray inductance, Kelvin source connections for simplified driving, and an internal NTC thermistor for temperature monitoring.

FET, MOSFET Arrays Feature Summary

Integrates high-speed SiC MOSFETs with ultra-low loss characteristics and zero reverse recovery SiC Schottky diodes.
Features very low stray inductance and Kelvin source terminals to facilitate easy gate drive implementation.
Includes an internal thermistor for precise junction temperature monitoring and utilizes an aluminum nitride substrate for improved thermal performance.
Provides direct mounting to heatsinks via solderable terminals for both power and signal connections.

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00003966A against the manufacturer's official website to ensure all electrical specifications and mechanical dimensions are current. Confirm that pins 13/14 and pins 20/24/26 are correctly shorted according to the three-phase bridge configuration requirements before integration into the final circuit design.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-frequency, high-efficiency power conversion systems requiring robust thermal management. The integrated Kelvin sources simplify gate driver layout, while the low thermal resistance supports high-power density designs. Ensure the application environment accommodates the specified operating junction temperature range and isolation voltage requirements.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's SP3F series of silicon carbide power modules. It is designed to replace traditional silicon-based IGBT or MOSFET solutions in applications demanding higher switching frequencies and reduced conduction losses. The triple phase bridge configuration consolidates multiple discrete components into a single compact package.