MSCSM70AM025T6AG

$535.56

Description：MOSFET 2N-CH 700V 689A
Series：-

SKU:5cce2945b8a9 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70AM025T6AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 689A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70AM025T6AG

Description：MOSFET 2N-CH 700V 689A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：689A (Tc)
Rds On (Max) @ Id, Vgs：3.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id：2.4V @ 24mA
Gate Charge (Qg) (Max) @ Vgs：1290nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：27000pF @ 700V
Power - Max：1.882kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70AM025T6AG

MSCSM70AM025T6AG

FET, MOSFET Arrays Overview

The MSCSM70AM025T6AG is a full bridge phase leg silicon carbide (SiC) MOSFET power module rated at 700V. It features a continuous drain current of 689A at TC = 25°C and a maximum pulsed drain current of 1380A. The device has a typical RDS(on) of 2.5mΩ at TJ = 25°C and 3.2mΩ at TJ = 175°C. Power dissipation reaches 1882W at TC = 25°C. Operating junction temperature ranges from -40°C to 175°C. The package utilizes an Aluminum Nitride substrate with M5 power connectors and includes an internal NTC thermistor for thermal monitoring.

FET, MOSFET Arrays Feature Summary

Utilizes Silicon Carbide technology for high-temperature performance and low on-resistance
Incorporates Kelvin source connections to facilitate easy gate drive implementation
Features an internal thermistor for precise temperature monitoring
Uses an Aluminum Nitride substrate to improve thermal management

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix against official Microchip documentation to ensure correct configuration. Confirm that the required voltage, current, and thermal specifications align with your system design requirements before procurement. Check for any specific handling precautions related to electrostatic discharge sensitivity during storage and installation.

FET, MOSFET Arrays Selection Notes

Select this module when designing systems requiring high efficiency and robust operation at elevated temperatures. The integrated Kelvin source simplifies driver layout, while the AlN substrate supports direct heatsink mounting. Ensure adequate cooling solutions are implemented to maintain junction temperatures within the specified operating range for optimal reliability.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET power module portfolio, designed for high-power applications. It integrates advanced wide-bandgap semiconductor technology to deliver superior switching performance compared to traditional silicon devices. The module is engineered for compact designs in industrial and automotive sectors.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, pin configurations, and thermal characteristics to ensure compatibility without compromising system performance or safety.