MSCSM70AM07CT3AG

$308.11

Description：MOSFET 2N-CH 700V 353A SP3F
Series：-

SKU:21d1a9e8c8e1 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70AM07CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 353A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70AM07CT3AG

Description：MOSFET 2N-CH 700V 353A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：353A (Tc)
Rds On (Max) @ Id, Vgs：6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id：2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：13500pF @ 700V
Power - Max：988W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70AM07CT3AG

MSCSM70AM07CT3AG

FET, MOSFET Arrays Overview

The MSCSM70AM07CT3AG is a dual N-Channel Silicon Carbide (SiC) MOSFET and SiC Schottky Barrier Diode (SBD) module manufactured by Microchip Technology. It utilizes the SP3F package with screw mount installation. Key electrical parameters include a drain-source breakdown voltage (Vds) of 700 V, a continuous drain current (Id) of 353 A, and a maximum on-resistance (Rds(on)) of 6.4 mOhms. The gate-source voltage range is -10 V to +25 V, with a threshold voltage of 1.9 V. The module supports an operating temperature range from -40°C to +125°C, features a power dissipation rating of 988 W, and exhibits a forward voltage (Vf) of 1.5 V for the integrated SBD.

FET, MOSFET Arrays Feature Summary

Integrates a dual N-Channel SiC MOSFET with a complementary SiC Schottky Barrier Diode in a single compact module.
Utilizes silicon carbide technology to enable high-temperature operation up to 125°C and low conduction losses.
Features a screw-mount SP3F package designed for robust mechanical connection and efficient thermal management.

FET, MOSFET Arrays Applications

High-efficiency DC-DC converters
Industrial motor drives
Uninterruptible power supplies (UPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix CT3AG against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the lot code and date code with Microchip's traceability records to guarantee component integrity and compliance with specified environmental standards.

FET, MOSFET Arrays Selection Notes

Select this module when designing circuits requiring a combined MOSFET and freewheeling diode solution in a dual configuration. The 700 V rating and 353 A current capacity make it suitable for medium-power applications. Consider the SP3F package dimensions and screw-mount requirements during PCB layout and heatsink integration to ensure adequate thermal performance within the specified temperature limits.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's discrete semiconductor module portfolio, specifically the MOSFET-SiC SBD category. It is part of the broader family of silicon carbide power modules designed to replace traditional silicon devices in high-performance power electronics. The SP3F packaging standardizes mounting and thermal interface solutions across similar product lines.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for compatible SP3F packaged SiC modules. Verify that any alternative part matches the 700 V rating, 6.4 mOhms Rds(on), and 353 A current specifications. Ensure the replacement maintains identical pinout configurations and thermal resistance values to avoid redesigning the cooling system.