MSCSM70AM10T3AG

FET, MOSFET Arrays Overview

The MSCSM70AM10T3AG is a full bridge silicon carbide (SiC) MOSFET power module rated for 700V and 241A continuous drain current. It features an RDS(on) of 9.5 mΩ at TJ = 25°C, with a maximum junction temperature of 175°C. The device utilizes an SP3F package with screw mounting and includes an internal NTC thermistor. Key electrical parameters include a gate threshold voltage of 1.9V to 2.4V, turn-on delay of 40ns, and turn-off delay of 50ns.

FET, MOSFET Arrays Feature Summary

• Full bridge configuration integrating four SiC MOSFETs in a single isolated package
• Kelvin source connection provided for low-inductance gate drive implementation
• Internal negative temperature coefficient (NTC) thermistor for precise junction temperature monitoring
• Aluminum nitride substrate utilized to achieve low thermal resistance and high heat dissipation

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004608A when sourcing components to ensure alignment with latest manufacturing specifications. Confirm that all designated pins are correctly shorted according to the official schematic requirements before installation. Ensure electrostatic discharge precautions are strictly followed during handling to prevent damage to the sensitive semiconductor structures.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high-frequency operation and superior thermal management within a compact footprint. The integrated Kelvin source simplifies PCB layout by minimizing stray inductance effects on switching performance. Evaluate the 175°C maximum junction temperature capability against your system's cooling strategy to optimize efficiency and reliability under varying load conditions.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's phase leg SiC MOSFET power module family, designed for high-power density applications. It shares the SP3F package form factor with other variants in the series but differs in voltage rating and internal bridge configuration. The technology leverages silicon carbide properties to reduce switching losses compared to traditional silicon devices.

FET, MOSFET Arrays Replacement Considerations

Direct pin-to-pin replacements within the same package require matching voltage, current, and thermal characteristics. Verify compatibility with existing gate drive circuits due to potential differences in gate charge and threshold voltages. Consult the manufacturer's selection guide for alternative modules with similar electrical ratings if exact substitution is not feasible.

FET, MOSFET Arrays FAQ

What is the recommended operating junction temperature range?

The recommended junction temperature under switching conditions ranges from -40°C to TJmax-25°C, while the absolute maximum operating junction temperature is 175°C.

How is the internal temperature sensor characterized?

The module contains an integrated NTC thermistor with a typical resistance of 50 kΩ at 25°C and a B25/85 constant of 3952 K for accurate thermal monitoring.

What are the specific pin shorting requirements for this module?

Pins 25 to 28 must be shorted together, pins 13 to 16 must be shorted together, and pins 18, 19, 20, and 22 must be shorted together as per the datasheet instructions.