MSCSM70AM19CT1AG

FET, MOSFET Arrays Overview

The MSCSM70AM19CT1AG is a Silicon Carbide (SiC) MOSFET and SiC SBD discrete semiconductor module manufactured by Microchip Technology. It features a phase leg configuration with a 700 V drain-source breakdown voltage (VDSS). The continuous drain current (Id) is rated at 97 A, with a typical on-resistance (RDSon) of 15 mΩ. Total gate charge is specified as 215 nC. The module utilizes the SP1F package for chassis mounting, designed for high-power applications requiring efficient thermal management and low switching losses.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) technology for superior dynamic and thermal performance compared to traditional silicon power MOSFETs.
• Incorporates an extremely low inductance SP1F package design to minimize switching losses and electromagnetic interference.
• Features a Silicon Nitride (Si3N4) substrate combined with thick copper layers to enhance heat dissipation and overall thermal reliability.

FET, MOSFET Arrays Applications

• High-efficiency motor drives
• Industrial power supplies
• Uninterruptible power systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and package variant against the official Microchip datasheet to ensure compatibility with your thermal interface and mounting requirements. Confirm that the component meets all relevant RoHS compliance standards required for your final assembly process before placing orders.

FET, MOSFET Arrays Selection Notes

Select this module when system design demands high voltage handling with minimal conduction losses. The 15 mΩ RDSon and 97 A current rating suit medium-to-high power density applications. Ensure gate drive circuits support the 215 nC total gate charge requirement for optimal switching speed without excessive driver stress.

FET, MOSFET Arrays Part Context

This component belongs to Microchip’s PM-MOSFET-SiC-SBD-SP1F product family. It integrates a SiC MOSFET and a complementary SiC Schottky Barrier Diode into a single robust module. The SP1F chassis mount form factor distinguishes it from smaller surface-mount alternatives, targeting industrial-grade power conversion systems.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching VDSS, Id, RDSon, and package dimensions.

FET, MOSFET Arrays FAQ

What is the maximum operating temperature for the MSCSM70AM19CT1AG?

The provided documentation does not specify the maximum junction or case operating temperature limits for this specific part number.

Does the SP1F package include integrated gate resistors?

The source material confirms the use of the SP1F package but does not detail internal gate resistor integration or specific pinout configurations.