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MSCSM70AM19T1AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 124A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM70AM19T1AG
- Description：MOSFET 2N-CH 700V 124A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：700V
- Current - Continuous Drain (Id) @ 25°C：124A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs：215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：4500pF @ 700V
- Power - Max：365W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM70AM19T1AG
FET, MOSFET Arrays Overview
The MSCSM70AM19T1AG is a full bridge silicon carbide (SiC) power module rated at 700V and 124A. It features an SP1F package with screw mount installation. Key electrical parameters include a drain-source on-resistance of 19 mΩ, gate-source voltage limits of -10 V to +23 V, and a threshold voltage of 1.9 V. The device supports a junction temperature range from -40°C to +175°C with a maximum power dissipation of 365 W. Dynamic characteristics specify turn-on delay of 40 ns, fall time of 20 ns, and total gate charge of 215 nC.
FET, MOSFET Arrays Feature Summary
- High-speed switching capability with ultra-low loss characteristics
- Kelvin source connection for simplified gate drive implementation
- Internal thermistor integrated for precise temperature monitoring
- Aluminum Nitride substrate utilized for enhanced thermal performance
FET, MOSFET Arrays Applications
- Welding converters
- Switched mode power supplies
- Uninterruptible power supplies
- EV motor and traction drive
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm exact configuration details. Ensure electrostatic discharge handling procedures are strictly followed during storage and assembly. Confirm that mounting torque specifications align with the datasheet requirements for reliable mechanical attachment to the heatsink.
FET, MOSFET Arrays Selection Notes
Select this component when designing high-frequency converters requiring low stray inductance and direct heatsink mounting. Evaluate the thermal resistance and operating temperature range against system cooling capabilities. Consider the internal thermistor integration for advanced protection schemes and ensure compatibility with the specified gate drive voltage levels.
FET, MOSFET Arrays Part Context
This device belongs to Microchip's silicon carbide MOSFET power module family. It utilizes the SP1F package format designed for phase leg or full bridge configurations. The module integrates N-channel SiC MOSFETs optimized for high efficiency and robust operation in demanding power electronics environments.
FET, MOSFET Arrays Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Cross-reference pinout compatibility and electrical ratings before considering any third-party modules.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
