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MSCSM70HM038AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 700V 464A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM70HM038AG
- Description：MOSFET 4N-CH 700V 464A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：700V
- Current - Continuous Drain (Id) @ 25°C：464A (Tc)
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id：2.4V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs：860nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：18000pF @ 700V
- Power - Max：1.277kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM70HM038AG
FET, MOSFET Arrays Overview
The MSCSM70HM038AG is a full bridge silicon carbide (SiC) power module manufactured by Microchip Technology. It features four N-channel SiC MOSFETs with a drain-source voltage rating of 700 V and a continuous drain current of 464 A at 25 °C case temperature. The device has a typical on-resistance of 4.8 mΩ and supports an operating junction temperature range from -40 °C to +175 °C. It utilizes an SP6 package with M5 power connectors and an aluminum nitride substrate for thermal management.
FET, MOSFET Arrays Feature Summary
- Kelvin source connection provided for simplified gate drive circuitry
- Aluminum nitride substrate utilized to enhance thermal dissipation performance
- Low stray inductance design optimized for high-frequency switching applications
FET, MOSFET Arrays Applications
- Welding converters
- Switched mode power supplies
- Uninterruptible power supplies
- EV motor and traction drive
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision DS00004602A when sourcing components to ensure alignment with electrical specifications. Confirm that handling procedures strictly adhere to electrostatic discharge precautions during installation. Ensure mounting torque values match the specified requirements for M5 terminals and heatsink interfaces to maintain reliable operation.
FET, MOSFET Arrays Selection Notes
Select this module for designs requiring a complete full bridge configuration within a single isolated package. Evaluate the thermal resistance characteristics against the expected heat sink capabilities. Consider the gate charge requirements when designing the driver stage to achieve optimal switching speeds and minimize losses.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's SP6 series of discrete semiconductor modules. It integrates multiple silicon carbide power switches into a unified assembly designed for robust industrial and automotive environments. The packaging facilitates direct mounting to heatsinks while providing necessary electrical isolation between terminals and the case.
FET, MOSFET Arrays Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the host system layout.
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