MSCSM70TLM05CAG

FET, MOSFET Arrays Overview

The MSCSM70TLM05CAG is a three-level inverter silicon carbide (SiC) MOSFET power module rated at 700V and 464A. It integrates SiC MOSFETs with zero reverse recovery characteristics and Kelvin source connections for simplified drive circuits. The device utilizes an aluminum nitride substrate to enhance thermal performance and features low stray inductance design. Key electrical parameters include a drain-source on-resistance of 4.8 mΩ, a gate threshold voltage of 1.9 V typ, and a maximum operating junction temperature of 175°C.

FET, MOSFET Arrays Feature Summary

• Integrated SiC Schottky diodes providing zero reverse and forward recovery behavior
• Kelvin source terminals included to facilitate easy gate drive implementation
• Aluminum nitride substrate utilized for improved thermal dissipation capabilities
• Low stray inductance architecture designed for high-frequency operation

FET, MOSFET Arrays Applications

• Solar converter systems
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A against the ordered quantity to ensure compliance with current manufacturing standards. Confirm that the mounting torque specifications for M6 heatsink interfaces and M5 terminals are strictly adhered to during installation. Ensure electrostatic discharge handling procedures are followed due to component sensitivity. Validate that the isolation voltage requirements meet the system's safety standards before final integration.

FET, MOSFET Arrays Selection Notes

Select this module when designing three-level inverter topologies requiring high efficiency and thermal robustness. The integrated SiC technology supports superior high-frequency switching performance compared to traditional silicon devices. Consider the low junction-to-case thermal resistance for effective heatsink selection. Verify that the gate drive circuitry can accommodate the specified voltage ranges and internal gate resistance values for optimal switching control.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's silicon carbide power module family, specifically engineered for advanced power conversion applications. It represents a high-integration solution combining MOSFETs and diodes within a single isolated package. The SP6C package style facilitates direct mounting to heatsinks, simplifying mechanical assembly while maintaining electrical isolation for safe operation in demanding industrial environments.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.