MSCSM70TLM10C3AG

FET, MOSFET Arrays Overview

The MSCSM70TLM10C3AG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It features a three-level inverter configuration with four N-channel devices. The component supports a Drain-to-Source Voltage (Vdss) of 700V and a continuous drain current of 241A at case temperature. Typical on-resistance (Rds(on)) is 9.5mOhm at 80A and 20V, with a typical gate-source threshold voltage of 2.4V at 8mA. Power dissipation is rated at 690W at case temperature.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide technology for high-temperature performance and low on-resistance
• Integrates SiC Schottky Diodes alongside power MOSFETs
• Designed specifically for three-level inverter applications

FET, MOSFET Arrays Applications

• Industrial power electronics systems
• Automotive powertrains
• Renewable energy conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and package variant when sourcing to ensure compatibility with your design requirements. Confirm that the component meets all relevant RoHS compliance standards required for your manufacturing process. Cross-reference the manufacturer part number against official distributor catalogs to avoid counterfeit components. Ensure proper handling procedures are followed due to the sensitivity of semiconductor materials.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high efficiency and thermal stability in three-level inverter topologies. Consider the 700V rating and 241A current capacity when designing power stages. Evaluate the 9.5mOhm on-resistance impact on conduction losses relative to your system's thermal management capabilities. Ensure gate drive circuits are compatible with the specified threshold voltage characteristics.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's family of Silicon Carbide power modules. It complements other SiC MOSFET offerings like the MSCSM70HM038AG and MSCSM70TAM10TPAG, providing specialized solutions for advanced inverter architectures. These modules leverage SiC material properties to outperform traditional silicon counterparts in dynamic and thermal performance.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes within the same series include MSCSM70HM038AG and MSCSM70TAM10TPAG, though pinouts and electrical parameters may differ. Verify functional equivalence before swapping. No other public confirmed substitute part numbers are available for this specific model.