MSCSM70VR1M03CT6AG

FET, MOSFET Arrays Overview

The MSCSM70VR1M03CT6AG is a Vienna rectifier silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates SiC MOSFETs and SiC Schottky diodes in an isolated package designed for direct heatsink mounting. The device features a 700V drain-source voltage rating with a continuous drain current of 585A at 25°C case temperature. Key electrical parameters include a typical RDS(on) of 3mΩ, a peak repetitive reverse voltage of 1200V for the diode, and a junction-to-case thermal resistance of 0.092°C/W. The module operates within a junction temperature range of -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Integrated Kelvin source terminals facilitate simplified gate drive circuitry.
• Utilizes an Aluminum Nitride substrate to enhance thermal dissipation performance.
• Incorporates internal thermistors for precise junction temperature monitoring.
• Features low stray inductance design optimized for high-frequency switching applications.

FET, MOSFET Arrays Applications

• Power factor correction systems
• Switched mode power supplies
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip distributors or official sales channels. Confirm datasheet revision A (08/2022) alignment during procurement. Ensure electrostatic discharge handling protocols are strictly followed upon receipt. Validate that the specific ordering suffix matches the required configuration before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this module for high-efficiency rectification requiring low forward recovery characteristics. Consider the 700V rating and 585A current capacity for robust power conversion designs. Evaluate the low thermal resistance against system cooling requirements. Verify compatibility with M5 power connectors and isolation voltage specifications.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module portfolio, specifically engineered for Vienna rectifier topologies. It represents a discrete semiconductor solution combining MOSFET and Schottky diode technologies. The SP6C LI package variant provides a compact form factor suitable for modern high-density power electronics architectures.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The recommended operating junction temperature under switching conditions ranges from -40°C up to TJmax minus 25°C, with a maximum absolute limit of 175°C.

Does the module include integrated temperature sensing?

Yes, the device includes an internal NTC thermistor for temperature monitoring, featuring a typical resistance of 50kΩ at 25°C.

What is the isolation voltage rating?

The RMS isolation voltage between any terminal and the case is rated at 4000V for one minute at 50Hz or 60Hz.