MSCSM70VR1M10CT3AG

$223.75

Description：MOSFET 2N-CH 700V 241A
Series：-

SKU:23732f7cbfe1 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70VR1M10CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 241A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70VR1M10CT3AG

Description：MOSFET 2N-CH 700V 241A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：241A (Tc)
Rds On (Max) @ Id, Vgs：9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：9000pF @ 700V
Power - Max：690W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70VR1M10CT3AG

MSCSM70VR1M10CT3AG

FET, MOSFET Arrays Overview

The MSCSM70VR1M10CT3AG is a Vienna rectifier silicon carbide (SiC) power module rated at 700V and 241A. It integrates SiC MOSFETs with an RDS(on) of 9.5 mΩ and SiC Schottky diodes with a VRRM of 1200V. The device features Kelvin sources for low-inductance driving, an internal NTC thermistor, and an Aluminum Nitride substrate. Operating junction temperatures range from -40°C to 175°C, with a recommended limit of TJmax-25°C under switching conditions.

FET, MOSFET Arrays Feature Summary

Integrated Kelvin source terminals facilitate easy gate drive connections while minimizing stray inductance.
Internal negative temperature coefficient thermistor enables precise on-module temperature monitoring.
Aluminum Nitride substrate provides improved thermal conductivity and reduced junction-to-case resistance.
SiC Schottky diodes exhibit zero reverse recovery charge and positive forward voltage temperature coefficients.

FET, MOSFET Arrays Applications

Power factor correction circuits
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004709A when sourcing components. Confirm that all multiple inputs and outputs are shorted together as specified: pins 10 to 12, 13 to 16, 18 to 20, and 29 to 32. Ensure proper electrostatic discharge handling procedures are followed during installation and testing to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and high-efficiency rectification. The isolated package allows direct mounting to heatsinks. Verify that the system can accommodate the required M4 mounting torque between 2 and 3 N.m. Consider the 110g package weight and low profile dimensions for mechanical integration within the target enclosure.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module portfolio, designed to replace traditional silicon devices in high-performance systems. It utilizes wide bandgap semiconductor technology to achieve superior thermal performance and lower switching losses compared to conventional IGBT or silicon MOSFET alternatives.