MSCSM70XM75CTYZBNMG

Description：MOSFET 6N-CH 700V 31A
Series：-

SKU:39cab0389b53 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70XM75CTYZBNMG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 700V 31A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70XM75CTYZBNMG

Description：MOSFET 6N-CH 700V 31A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：31A (Tc), 52A (Tc)
Rds On (Max) @ Id, Vgs：75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
Vgs(th) (Max) @ Id：2.4V @ 1mA, 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：56nC @ 20V, 99nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：1175pF @ 700V, 2010pF @ 700V
Power - Max：90W (Tc), 141W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70XM75CTYZBNMG

MSCSM70XM75CTYZBNMG

FET, MOSFET Arrays Overview

The MSCSM70XM75CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module. It integrates Silicon Carbide (SiC) MOSFETs, SiC Schottky Diodes, and IGBTs. The device features a drain-source voltage of 700 V for the SiC components and 1200 V for the IGBTs. Continuous drain current reaches 31 A at 25 °C for the SiC MOSFETs and 52 A for the soft-start MOSFET Q7. The IGBTs provide a continuous collector current of 27 A. The package includes an internal thermistor for temperature monitoring.

FET, MOSFET Arrays Feature Summary

Integrates SiC MOSFETs, SiC diodes, and IGBTs in a single isolated package
Includes an internal PTC thermistor for junction temperature monitoring
Features low stray inductance design with lead frames for power connections
Utilizes a silicon nitride substrate and aluminum-silicon carbide base plate

FET, MOSFET Arrays Applications

Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) systems
Hybrid Power Device (HPD) for Electro-Hydrostatic Actuator (EHA) systems
High reliability Power Core Module (PCM)
Modular power module for Power Drive Electronic (PDE)

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004979A against your design requirements. Confirm that the operating case temperature range of -55 °C to 125 °C aligns with your thermal management strategy. Ensure proper electrostatic discharge handling procedures are followed during installation due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module when a combined solution for motor drive, braking, and solenoid control is required. The integrated SiC technology supports high-temperature operation up to 175 °C. Verify gate drive compatibility with the specified threshold voltages and internal gate resistance values for both the SiC MOSFETs and IGBTs.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's Hybrid Power Device series designed for aerospace and industrial applications. It consolidates multiple power stages into one unit to reduce system weight and complexity. The module is engineered for high reliability in demanding environments requiring robust thermal performance.