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Product Detailed Parameters
- Description：N-Channel MOSFET,100V,DFN5x6
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5060-8
- Package / Case：8-PowerVDFN
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Overview
The MSH100N045SAAU is an N-channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a 100 V drain-source voltage rating and a maximum continuous drain current of 100 A at 25°C case temperature. The device offers a typical on-resistance of 3.7 mΩ at VGS = 10V and supports a pulsed drain current of 480 A. Packaged in a PDFN 5x6 format, it provides superior switching performance and withstands high energy pulses in avalanche and commutation modes.
Feature Summary
- Utilizes advanced trench DMOS technology to minimize on-resistance and enhance switching performance.
- Guarantees 100% single pulse avalanche energy testing for robust reliability under harsh conditions.
- Features super low gate charge and excellent dv/dt capability for efficient operation.
- Complies with RoHS and Green Product requirements.
Applications
- Motor Driver
- Load Switch
- Synchronous Rectifier
- BMS
Procurement Notes
Verify the specific revision status against the manufacturer's latest documentation before finalizing procurement. Confirm that the PDFN 5x6 package dimensions align with the target PCB footprint design. Ensure thermal management strategies account for the specified junction-to-ambient resistance values during operation.
Selection Notes
Select this component for applications requiring high current handling and fast switching speeds within a 100 V system. Consider the PDFN 5x6 package size for space-constrained designs. Evaluate the thermal dissipation capabilities relative to the expected load currents and ambient operating temperatures to ensure reliable long-term performance.
Part Context
This part belongs to the Bruckewell Technology Corporation lineup of power MOSFETs. It represents their implementation of trench DMOS technology aimed at reducing conduction and switching losses. The device is engineered to meet specific industrial standards for reliability and environmental compliance.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum single pulse avalanche energy guaranteed for this device?
The datasheet guarantees a minimum single pulse avalanche energy of 100 mJ under test conditions of VDD=25V, L=0.5mH, and IAS=20A.
Does the MSH100N045SAAU support reverse recovery characteristics?
Yes, the device specifies a reverse recovery time (trr) of 70 ns and a reverse recovery charge (Qrr) of 170 nC when tested at IF=30A and dI/dt=100A/μs.
