MSH100P50

$0.71

Description：P Channel MOSFET,100V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:5693e1b6e185 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：P Channel MOSFET,100V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5060-8
Package / Case：8-PowerVDFN

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MSH100P50

Overview

The MSH100P50 is a P-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a Drain-Source Voltage of -100 V and a Continuous Drain Current of -30 A at 25°C. The device guarantees an RDS(ON) of 50 mΩ at VGS = -10V and supports a Pulsed Drain Current of -100 A. Single Pulse Avalanche Energy reaches 345 mJ with L=0.1mH. Power Dissipation is 5.5 W at TA=25°C. Thermal Resistance (RθJA) is 62 °C/W. Operating Junction Temperature ranges from -55 to +150 °C. Total Gate Charge is typically 92 nC.

Feature Summary

Utilizes advanced trench DMOS technology to minimize on-resistance and enhance switching performance.
Capable of withstanding high energy pulses in avalanche and commutation modes.
Features improved dv/dt capability and guaranteed 100% EAS testing.

Applications

Motor Drive
LED Lighting
Hand-held Device

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before integration. Confirm that the PDFN 5X6 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring efficient fast switching and robust avalanche energy handling. Evaluate the -100 V rating against peak circuit voltages. Consider the -30 A continuous current limit relative to load requirements. Assess thermal constraints based on the 5.5 W power dissipation rating at ambient temperature.

Part Context

This component belongs to the Bruckewell Technology Corporation semiconductor portfolio. It is manufactured using trench DMOS processes optimized for low on-resistance. The device is RoHS compliant and packaged in a PDFN 5X6 format suitable for surface mount assembly.