MSH30N016

$0.71

Description：N Channel MOSFET,30V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:a4a81e420890 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,30V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5060-8
Package / Case：8-PowerVDFN

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MSH30N016

Overview

The MSH30N016 is an N-channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a drain-source voltage of 30 V and a maximum continuous drain current of 100 A at 25°C case temperature. The device achieves a static drain-source on-resistance of 1.6 mΩ at VGS = 10V and 2.5 mΩ at VGS = 4.5V. It supports a single pulse avalanche energy of 151 mJ and operates within a junction temperature range of -55 to 150 °C.

Feature Summary

Advanced trench DMOS technology minimizes on-resistance and enhances switching performance.
Guaranteed 100% EAS testing ensures reliability under high energy pulses in avalanche mode.
Super low gate charge and excellent dv/dt capability optimize efficiency.
True logic level gate operation allows effective control with standard drive voltages.

Applications

Power management in desktop computers
DC/DC converters
Synchronous rectifier applications

Procurement Notes

Verify the specific datasheet revision (Rev. A) against your design requirements. Confirm that the PDFN 5X6 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values during operation.

Selection Notes

Select this component when a 30 V rating and high current handling are required. Consider the low on-resistance for minimizing conduction losses. Evaluate the thermal characteristics for your specific mounting conditions. Verify compatibility with synchronous rectification topologies.

Part Context

This part belongs to Bruckewell's N-channel MOSFET lineup. It utilizes trench DMOS technology tailored for superior switching performance. The device is RoHS compliant and meets green product requirements. It is packaged in a compact PDFN 5X6 format suitable for surface mount assembly.