MSH40N065DAU

Overview

The MSH40N065DAU is an N-channel power MOSFET utilizing trench DMOS technology, designed for high-efficiency and fast-switching applications. It features a 40V drain-source voltage rating and a maximum continuous drain current of 55A at 25°C case temperature. The device achieves a typical on-resistance of 7mΩ at VGS=10V and 10.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.2V to 2.5V, total gate charge of 19.8nC, and single pulse avalanche energy up to 68mJ. It operates within a junction temperature range of -55°C to +175°C and is housed in a PDFN 5x6 package.

Feature Summary

• Trench DMOS technology minimizes on-resistance while providing superior switching performance and high energy pulse withstand capability.
• Enhanced dv/dt capability and guaranteed 100% single pulse avalanche energy (EAS) ensure robust operation under demanding conditions.
• Low gate charge and optimized thermal characteristics support efficient operation in synchronous rectification and power supply circuits.

Applications

• Motherboard (MB), VGA, and Vcore power delivery
• Point-of-load (POL) conversion stages
• Second-stage synchronous rectification in switch-mode power supplies (SMPS)

Procurement Notes

Verify the specific revision status and datasheet version before procurement, as Bruckewell reserves the right to update specifications without notice. Confirm that the PDFN 5x6 package dimensions and marking align with your PCB footprint requirements. Ensure that the supplier provides documentation confirming RoHS compliance and green product manufacturing standards as stated in the official publication.

Selection Notes

Select this component when designing circuits requiring low conduction losses at 40V ratings. The 7mΩ RDS(on) at 10V drive makes it suitable for standard logic-level or dedicated gate driver applications. For lower drive voltages, consider the higher RDS(on) value at 4.5V. Verify that the thermal resistance of 4.0°C/W allows adequate heat dissipation for the intended continuous current load in the target enclosure.

Part Context

This device belongs to Bruckewell's portfolio of N-channel MOSFETs leveraging advanced trench DMOS processes. It is engineered to balance low static resistance with dynamic switching efficiency. The PDFN 5x6 package offers a compact form factor with improved thermal performance compared to traditional surface-mount options, targeting modern space-constrained power electronics designs.

Replacement Considerations

No public substitute part numbers are documented in the provided source material. When evaluating alternatives, match the 40V VDS rating, 55A ID current capacity, and PDFN 5x6 package outline. Ensure comparable RDS(on) values at the operating gate voltage and verify similar avalanche ruggedness if used in inductive loads.

FAQ

What is the maximum single pulse avalanche energy (EAS) guaranteed for this device?

The device guarantees 100% EAS testing with a minimum value of 31mJ under test conditions of VDD=25V, L=0.1mH, and IAS=25A. The absolute maximum rating lists 68mJ at IAS=37A.

How does the on-resistance vary with gate-source voltage?

The typical RDS(on) is 7mΩ at VGS=10V. At a lower drive voltage of VGS=4.5V, the typical RDS(on) increases to 10.5mΩ.

Is the MSH40N065DAU compliant with environmental regulations?

Yes, the device meets RoHS requirements and is classified as a Green Product according to the manufacturer's datasheet.