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Product Detailed Parameters
- Description：N-Channel MOSFET,Dual,60V,DFN5x6
- Series：-
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Rds On (Max) @ Id, Vgs：42mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The MSH60N17D is a trench N-channel MOSFET designed for synchronous buck converter applications. It features a maximum drain-source voltage of 60 V and a continuous drain current of 17 A at 25°C case temperature. The device offers a typical static on-resistance of 42 mΩ at VGS=10V and 52 mΩ at VGS=4.5V. Total gate charge is typically 19 nC, with a gate threshold voltage ranging from 1.2 V to 2.5 V. Single pulse avalanche energy is rated at 22 mJ under specified test conditions. Power dissipation reaches 31.3 W at 25°C case temperature.
Feature Summary
- Suitable for 4.5V gate drive applications
- Super low gate charge characteristics
- Excellent CdV/dt effect decline
- 100% EAS guaranteed reliability
Applications
- DC fan control
- Motor drive systems
- Networking equipment
- Half bridge topology circuits
- Full bridge topology circuits
Procurement Notes
Verify the component against the official Bruckewell Technology datasheet Rev. A-2024. Confirm that the package type matches the PDFN 5x6 specification and check the marking codes. Ensure the ordering suffix aligns with the required packing quantity of 3,000 per reel. Validate RoHS compliance status before integration into final assemblies.
Selection Notes
Select this component when designing synchronous buck converters requiring high cell density and low gate charge. Evaluate thermal management requirements based on the 62 °C/W junction-to-ambient thermal resistance. Consider the 4.5V gate drive compatibility for logic-level control interfaces. Verify that the 60V breakdown voltage meets the circuit's peak voltage demands.
Part Context
This part belongs to the Bruckewell trench N-channel MOSFET family. It utilizes extreme high cell density technology to optimize on-resistance and switching performance. The device is manufactured as a discrete semiconductor component intended for surface-mount assembly in power conversion modules.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires matching the 60V rating, 17A current capacity, and PDFN 5x6 package dimensions.
