MSH60N23DAU

Description：N-Channel MOSFET,Dual,60V,DFN5x6
Series：-

SKU:e34b8ba8f600 Category: FET, MOSFET Arrays Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N-Channel MOSFET,Dual,60V,DFN5x6
Series：-
Mfr：Bruckewell
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Rds On (Max) @ Id, Vgs：32mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (5x6)
Grade：Automotive
Qualification：AEC-Q101

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MSH60N23DAU

Overview

The MSH60N23DAU is a N-channel 60-V (D-S) MOSFET from Bruckewell Technology Corporation, utilizing high cell density trench technology. It features an RDS(on) of 32 mΩ at VGS=10V and 38 mΩ at VGS=4.5V. The device supports a continuous drain current of 23 A at TC=25°C and offers a total gate charge of 12.6 nC. It includes Zener protection for the gate-source junction with a ±20 V rating. The component is housed in a PDFN 5X6 package and guarantees 100% EAS testing.

Feature Summary

Suitable for 4.5V gate drive applications
Super low gate charge characteristics
Excellent CdV/dt effect decline
100% EAS guaranteed reliability

Applications

DC fan control
Motor drive applications
Networking equipment
Half / Full bridge topology circuits

Procurement Notes

Verify the exact ordering suffix DAU against the manufacturer's official documentation to confirm the specific tape-and-reel packing quantity of 3,000 units per reel. Ensure that the RoHS compliant status aligns with your project's environmental requirements before finalizing procurement orders.

Selection Notes

Select this component for synchronous buck converter applications requiring extreme high cell density. Consider the 3 °C/W thermal resistance and 41.6 W power dissipation limits when designing the PCB copper area. Verify that the 60 V breakdown voltage meets the system's maximum operating voltage requirements.

Part Context

This part belongs to Bruckewell's high-performance trench N-channel MOSFET series. It is designed to provide excellent on-resistance and gate charge metrics specifically optimized for modern synchronous buck converters. The PDFN 5X6 package provides a compact footprint suitable for space-constrained electronic designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternative components based on matching 60 V ratings, comparable RDS(on) values, and identical PDFN 5X6 package dimensions.