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Product Detailed Parameters
- Description：N Channel MOSFET,60V,DFN5X6
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5060-8
- Package / Case：8-PowerVDFN
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Overview
The Bruckewell MSH60N42 is an N-Channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a drain-source voltage of 60 V and a continuous drain current of 42 A at 25°C case temperature. The device achieves a maximum static drain-source on-resistance of 17 mΩ at VGS = 10V. It supports a single pulse avalanche energy of 45 mJ and operates within a junction temperature range of -55 to +150 °C.
Feature Summary
- Advanced trench DMOS technology minimizes on-resistance while providing superior switching performance.
- Capable of withstanding high energy pulses in both avalanche and commutation modes.
- Enhanced dv/dt capability improves reliability during rapid voltage transitions.
- Guaranteed 100% EAS testing ensures full function reliability under stress conditions.
Applications
- Motor Drive
- Power Tools
- LED Lighting
Procurement Notes
Verify the specific revision level against the latest official datasheet before finalizing procurement specifications. Confirm that the PDFN 5x6 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-ambient resistance values under your intended operating conditions.
Selection Notes
Select this component when designing circuits requiring low conduction losses and robust avalanche ruggedness. Evaluate the gate charge characteristics against your driver capabilities to optimize switching speeds. Consider the thermal derating curves for continuous operation at elevated case temperatures to maintain safe operating area compliance.
Part Context
This part belongs to the Bruckewell N-Channel MOSFET series, which employs advanced trench DMOS technology. The family focuses on delivering high efficiency and fast switching capabilities for power electronics. These devices are engineered to minimize on-resistance while maintaining strong performance under high-energy pulse conditions.
Replacement Considerations
Consult official manufacturer substitution lists or cross-reference databases for verified equivalent parts. Ensure any replacement maintains compatibility with the required 60-V rating, 42-A continuous current capacity, and PDFN 5x6 package outline.
FAQ
What is the guaranteed avalanche energy rating?
The MSH60N42 guarantees 100% EAS testing with a maximum single pulse avalanche energy of 45 mJ under specified test conditions.
How does the on-resistance vary with temperature?
The normalized on-resistance increases as the junction temperature rises from -50 °C to +150 °C, following the typical characteristic curve provided in the datasheet.
