MSHM100N20

$0.36

Description：N-Channel MOSFET,100V,DFN3x3
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:a5e2f12bc87e Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N-Channel MOSFET,100V,DFN3x3
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN3333-8
Package / Case：8-PowerVDFN

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MSHM100N20

Overview

The MSHM100N20 is an N-channel MOSFET with a 100V drain-source voltage rating. It features a maximum on-resistance of 20mΩ at VGS=10V and 29mΩ at VGS=4.5V. The device supports a continuous drain current of 28A at 25°C case temperature and handles a pulsed current of 112A. Total gate charge is typically 12.5nC, with a single pulse avalanche energy rating of 51mJ. Power dissipation reaches 44W at 25°C, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

High cell density trench technology for low on-resistance
Super low gate charge for efficient switching
Excellent CdV/dt effect decline
Guaranteed 100% EAS reliability

Applications

Synchronous buck converters
Networking equipment
Load switches
LED applications

Procurement Notes

Verify the specific datasheet revision (Rev. A -2023) matches your design requirements. Confirm that the PDFN 3.3x3.3 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your actual mounting conditions.

Selection Notes

Select this component when a 100V N-channel MOSFET is required for synchronous rectification or load switching. Consider the 20mΩ RDS(on) for efficiency targets at 10V drive. Evaluate the 12.5nC gate charge against driver capabilities. Verify that the 44W power dissipation rating meets the thermal constraints of the target application environment.

Part Context

This part belongs to Bruckewell's high-performance trench N-channel MOSFET lineup. It utilizes extreme high cell density to optimize both static and dynamic performance metrics. The device is designed specifically for applications demanding low conduction losses and fast switching speeds in compact surface-mount packages.