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Product Detailed Parameters
- Description：N Channel MOSFET,80V,DFN3X3
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN3333-8
- Package / Case：8-PowerVDFN
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Overview
The MSHM80N07 is an N-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a Drain-Source Voltage (VDS) of 80 V and Gate-Source Voltage (VGS) of ±20 V. The device supports a continuous drain current (ID) of 60 A at 25°C case temperature and a pulsed drain current (IDM) of 240 A. Static Drain-Source On-Resistance (RDS(on)) is rated at 7 mΩ typical at VGS=10V and 11 mΩ max at VGS=4.5V. Power dissipation reaches 60 W at 25°C. Avalanche energy (EAS) is guaranteed up to 125 mJ.
Feature Summary
- Trench DMOS technology minimizes on-resistance and enhances switching performance.
- Superior dv/dt capability ensures robust operation in commutation modes.
- Guaranteed single pulse avalanche energy withstands high energy pulses.
Applications
- Networking equipment
- Load switch circuits
- Synchronous rectifiers
- Quick chargers
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the PDFN 3.3x3.3 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Selection Notes
Select this component for applications requiring low conduction losses and high surge tolerance. Evaluate the gate charge specifications against driver capabilities to optimize switching speed. Consider the thermal resistance ratings when designing heat dissipation paths for sustained high-current operations.
Part Context
This part belongs to Bruckewell Technology Corporation's lineup of surface mount power MOSFETs. It utilizes advanced trench DMOS architecture to deliver superior electrical characteristics compared to standard planar devices. The product is RoHS compliant and manufactured as a green device.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Cross-reference pinouts, voltage ratings, and thermal parameters carefully when considering equivalent components from other manufacturers.
FAQ
What is the maximum single pulse avalanche energy?
The MSHM80N07 guarantees a single pulse avalanche energy of up to 125 mJ under test conditions of VDD=50V, VGS=10V, L=0.1mH, and IAS=50A.
How does the on-resistance vary with temperature?
The normalized on-resistance increases as the junction temperature rises. The device maintains lower resistance at cooler temperatures, following the typical curve provided in the electrical characteristics section.
