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The MSL60N05 is a high-performance N-channel MOSFET utilizing advanced trench technology with extreme cell density. It provides excellent RDS(ON) and gate charge characteristics for small power switching applications. The device features a 60V drain-source voltage rating, a continuous drain current of 5A at 25°C, and a maximum junction temperature of 150°C. Packaged in SOT-223, it meets RoHS and Green Product requirements.
Verify the specific datasheet revision (Rev. A -2020) matches your design requirements. Confirm that the SOT-223 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance ratings under actual operating conditions.
Select this component for applications requiring efficient small power switching with low conduction losses. Consider the 60V breakdown voltage and 5A continuous current limits when designing circuits. Evaluate the thermal performance based on the specified power dissipation and ambient temperature constraints.
Bruckewell Technology Corporation manufactures the MSL60N05 as part of their discrete semiconductor portfolio. The company focuses on providing innovative solutions for power management and switching applications. This MOSFET represents their commitment to high-density cell designs for improved efficiency.
Consult official Bruckewell documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating electrical parameters and pin configurations against the original specifications.
The maximum operating junction temperature is +150°C.
Yes, the device meets RoHS and Green Product requirements.