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Product Detailed Parameters
- Description：N Channel MOSFET,Dual,30V,SOP-8
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Rds On (Max) @ Id, Vgs：14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The MSQ30N10D is a dual N-channel MOSFET with a 30V drain-source voltage rating. It features an SOP-8 package and provides a maximum continuous drain current of 10A at 25°C, rising to 30A pulsed. The static on-resistance is specified as 14mΩ at VGS=10V and 20mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.0V to 3.0V, total gate charge of 12.6nC, and input capacitance of 1317pF. The device supports a junction temperature up to 150°C and includes avalanche energy testing.
Feature Summary
- Dual N-channel configuration for synchronous applications
- High cell density design for low on-resistance
- Super low gate charge for efficient switching
- Excellent CdV/dt effect decline
- Guaranteed 100% EAS reliability
Applications
- Motherboard (MB) / VGA / Vcore power stages
- Point-of-load (POL) converter applications
- Second stage synchronous rectification in SMPS
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before purchase. Confirm that the component meets RoHS and Green Product requirements if environmental compliance is mandatory for your assembly process. Ensure the supplier provides traceability data consistent with Bruckewell Technology Corporation standards.
Selection Notes
Select this component for low-voltage synchronous buck converters requiring compact packaging. The dual configuration reduces board space compared to single devices. Evaluate thermal performance based on the 62.5 °C/W junction-to-ambient resistance when designing heat dissipation strategies for the SOP-8 footprint.
Part Context
This part belongs to the trench N-channel MOSFET family from Bruckewell Technology Corporation. It utilizes extreme high cell density technology to optimize the trade-off between on-resistance and gate charge. The device is designed specifically for high-performance digital power applications where size and efficiency are critical constraints.
Replacement Considerations
No public substitute part numbers are documented in the provided datasheet. Verify pinout compatibility and electrical ratings carefully if considering alternatives from other manufacturers.
FAQ
What is the maximum single pulse avalanche energy?
The MSQ30N10D guarantees a minimum single pulse avalanche energy of 5mJ under test conditions of VDD=25V, L=0.1mH, and IAS=10A.
How does the on-resistance vary with gate voltage?
The typical on-resistance is 9mΩ at VGS=4.5V and decreases to 14mΩ at VGS=10V, both measured at ID=10A.
Is the device suitable for high-frequency switching?
Yes, the device features super low gate charge (12.6nC typical) and excellent CdV/dt decline, supporting fast switching speeds in applications like POL converters.
