MSQ30N16

$0.25

Description：N Channel MOSFET,30V,SOP-8
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:55b2c1b55ba7 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,30V,SOP-8
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

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MSQ30N16

Overview

The MSQ30N16 is an N-channel trench MOSFET designed for synchronous buck converter applications. It features a drain-source voltage of 30 V and a gate-source voltage rating of ±20 V. The device provides a maximum static drain-source on-resistance of 8 mΩ at VGS = 4.5 V and ID = 10 A, or 6 mΩ at VGS = 10 V and ID = 16 A. Continuous drain current reaches 16 A at TC = 25°C and 10 A at TC = 100°C. Pulsed drain current capability is rated at 65 A. Power dissipation is specified as 2.5 W at TC = 25°C and 1.5 W at TA = 25°C. The operating junction temperature range spans from -55 °C to +150 °C.

Feature Summary

High cell density trench technology providing low on-resistance and optimized gate charge
Guaranteed single pulse avalanche energy performance with full function reliability approval
Enhanced dv/dt capability and fast switching characteristics

Applications

Notebook power management systems
Load switch circuits
LED driver applications
Hand-held electronic devices

Procurement Notes

Verify the component against the official Bruckewell Technology Corporation datasheet Rev. A (2020). Confirm that the marking matches the publication order number exactly. Ensure compliance with RoHS and Green Product requirements if environmental standards are mandatory for your assembly process.

Selection Notes

Select this component when designing synchronous buck converters requiring high cell density and low RDS(ON). Evaluate thermal constraints carefully, as power dissipation drops significantly above ambient temperatures. Verify that the 30 V drain-source voltage rating accommodates peak transient voltages in the target circuit design.

Part Context

This part belongs to the Bruckewell trench N-channel MOSFET family. It utilizes extreme high cell density architecture to achieve superior electrical performance compared to standard planar designs. The device is specifically engineered to optimize the trade-off between conduction losses and switching speed for modern power conversion topologies.