MSRT100100D

Overview

The MSRT100100D is a silicon standard recovery diode module from the MSRT100 series, featuring a three tower isolation package. It provides a repetitive peak reverse voltage of 1000 V and an average forward current of 100 A per leg. The device supports a peak forward surge current of 2000 A per leg. Electrical characteristics include a maximum instantaneous forward voltage of 1.1 V at 100 A and 25 °C, with a thermal resistance junction-to-case of 0.45 °C/W. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Three Tower Isolation Package
• Electrically isolated base plate

Applications

Procurement Notes

Verify the specific suffix (AD, ADR, or D) against the datasheet to confirm terminal configuration and marking requirements. Confirm that the 1000 V rating aligns with system voltage constraints. Ensure mounting hardware matches the screw mount style for the Three Tower Iso package. Check for any discontinuation notices as this component family may have lifecycle changes.

Selection Notes

Select based on the required blocking voltage within the 600 V to 1000 V range. Consider the 100 A per leg current rating for load requirements. Evaluate the 0.45 °C/W thermal resistance for heatsink design. Verify compatibility with standard recovery applications versus fast recovery needs.

Part Context

This component belongs to the MSRT100 series of silicon standard recovery diode modules. The series includes variants with voltages from 600 V to 1000 V. All models share the same Three Tower Iso package structure and electrical isolation features, differing primarily in reverse voltage ratings and specific suffix designations.

Replacement Considerations

MSRT10080D

FAQ

What is the peak forward surge current rating?

The peak forward surge current is 2000 A per leg for an 8.3 ms half-sine wave.

Is the module sensitive to electrostatic discharge?

No, the device is not ESD sensitive.