MSRT100120AD

Overview

The MSRT100120AD is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features an electrically isolated base plate and a Three Tower package design. The device supports a repetitive peak reverse voltage of 1200 V and an average forward current of 100 A per leg. Maximum instantaneous forward voltage is 1.1 V at 100 A, with a maximum thermal resistance of 0.45 °C/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• High surge capability
• Isolation type package
• Electrically isolated base plate

Applications

• Industrial power supplies
• Motor drives
• Inverters

Procurement Notes

Verify the specific datasheet version for the MSRT100120AD model before procurement. Confirm that the electrical characteristics align with system requirements, particularly regarding the 1200 V rating and 100 A current capacity. Ensure proper mounting techniques are used for the Three Tower package to maintain thermal performance.

Selection Notes

Select this component when high surge capability and electrical isolation are required in power conversion applications. The low thermal resistance facilitates efficient heat dissipation. Consider the operating temperature range and package dimensions to ensure compatibility with the intended mechanical assembly and thermal management strategy.

Part Context

This part belongs to the MSRT100 series of silicon standard recovery diodes. The series includes variants with different voltage ratings, such as 1400 V and 1600 V options. All models share similar physical packaging and core electrical characteristics, differing primarily in their blocking voltage capabilities.

Replacement Considerations

Direct replacements include other MSRT100XXXD or MSRT100XXXAD models within the same series. Verify that substitute parts match the 1200 V rating and 100 A current specifications to ensure functional equivalence.