MSRT150100A

$24.86

Description：DIODE MOD GP 1000V 150A 3TOWER
Series：-

SKU:100025a668e5 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MOD GP 1000V 150A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：1000 V
Current - Average Rectified (Io) (per Diode)：150A
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 150 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：10 µA @ 600 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MSRT150100A

Overview

The MSRT150100A is a silicon-based standard recovery diode module manufactured by GeneSiC Semiconductor. It features a three-tower package design with screw mount installation. The component supports a reverse voltage of 1000 V and an average forward current of 150 A per diode. It operates within a junction temperature range of -55°C to +150°C. The module utilizes a common cathode configuration for efficient power rectification in high-current applications.

Feature Summary

Standard recovery silicon technology for robust performance
Three-tower module construction for compact integration
Common cathode configuration simplifying circuit design

Applications

Industrial power supply systems
Motor drive rectification circuits
Inverter input stages

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm technical specifications. Ensure compatibility with thermal management requirements and mounting hardware. Check for end-of-life status or alternative sourcing options if availability is restricted. Confirm RoHS compliance and environmental certifications as required by the application standards.

Selection Notes

Select this module for applications requiring high current handling with standard recovery characteristics. Evaluate thermal resistance and cooling methods to maintain junction temperatures within safe limits. Compare voltage ratings against peak inverse voltage conditions in the circuit. Consider the physical dimensions and screw mount style for mechanical integration constraints.

Part Context

This component belongs to the MSRT series of diode modules from GeneSiC Semiconductor. The series includes various voltage and current ratings, such as the MSRT150120(A) and MSRT250120(A). These modules are designed for high-power discrete and power module applications, offering reliable performance in demanding electrical environments.