ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE MOD GP 1400V 150A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1400 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 150 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1400 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
Download product information
Overview
The GeneSiC Semiconductor MSRT150140AD is a silicon standard recovery diode module rated for a repetitive peak reverse voltage of 1400 V. It provides an average forward current of 150 A per leg with a maximum instantaneous forward voltage of 990 mV at 25 °C. The device features a three tower package with an electrically isolated base plate and supports junction temperatures from -55 °C to 150 °C.
Feature Summary
- Features high surge capability with a peak forward surge current of 2250 A per leg.
- Utilizes an isolation type package design with an electrically isolated base plate.
Applications
- Industrial power conversion systems
- High voltage rectification circuits
- Isolated power supply designs
Procurement Notes
Verify the specific voltage rating suffix against the datasheet, as the MSRT150140AD belongs to a series ranging from 1200 V to 1600 V. Confirm that the required thermal management aligns with the specified junction-to-case thermal resistance. Ensure the application environment remains within the stated operating temperature range of -55 °C to 150 °C for reliable performance.
Selection Notes
Select this component when a 1400 V blocking voltage is required alongside 150 A continuous current handling. The three tower package facilitates screw mounting and efficient heat dissipation. Consider the electrical isolation feature if galvanic separation between the circuit ground and the heatsink is necessary for safety or noise reduction in the system design.
Part Context
This part belongs to the MSRT150XXXD family of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, specifically MSRT150120(A)D through MSRT150160(A)D. All modules share identical physical dimensions and terminal configurations while differing in their peak reverse voltage specifications.
Replacement Considerations
Direct substitutes include other models within the MSRT150120(A)D to MSRT150160(A)D series that match the 150 A current rating and three tower package form factor. Verify that any replacement maintains the same 1400 V minimum reverse voltage requirement and compatible thermal characteristics.
