MSRT15080D

Overview

The GeneSiC Semiconductor MSRT15080D is a silicon standard recovery diode module rated for a repetitive peak reverse voltage of 800 V. It provides an average forward current of 150 A per leg with a maximum instantaneous forward voltage of 1.1 V at Tj = 25 °C and IFM = 150 A. The device supports a peak forward surge current of 2250 A per leg. Thermal resistance from junction to case is 0.40 °C/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• High surge capability
• Three tower package configuration
• Isolation type package with electrically isolated base plate
• Not ESD sensitive

Applications

• Industrial power supplies
• Motor drives
• Inverters

Procurement Notes

Verify the specific part number suffix against official documentation to confirm exact voltage ratings and package variations. Ensure thermal management solutions align with the specified junction-to-case thermal resistance. Confirm compliance requirements such as RoHS status prior to procurement.

Selection Notes

Select this component for applications requiring high surge current handling and electrical isolation. The three-tower package design facilitates efficient mounting and heat dissipation. Consider the 800 V rating for systems operating within this voltage range while ensuring adequate cooling for the 150 A continuous current load.

Part Context

This component belongs to the MSRT150XX series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings ranging from 600 V to 1000 V, all sharing similar current and thermal characteristics.

Replacement Considerations

Compatible substitutes include other models within the MSRT150XX series with matching or higher voltage ratings, such as MSRT15060D or MSRT150100D, provided they fit the same mechanical footprint and meet the system's electrical requirements.