MSRT200140A

$33.15

Description：DIODE MOD GP 1400V 200A 3TOWER
Series：-

SKU:a9cec8c72ed5 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MOD GP 1400V 200A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：1400 V
Current - Average Rectified (Io) (per Diode)：200A (DC)
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 200 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：10 µA @ 600 V
Operating Temperature - Junction：-40°C ~ 175°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MSRT200140A

Overview

The MSRT200140A is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a one-pair common cathode configuration housed in a three-tower base-mount package. The device supports a maximum DC reverse voltage of 1400 V and an average rectified current of 200 A per diode. Forward voltage is specified at 1.2 V when conducting 200 A. Reverse leakage current is limited to 25 µA at 600 V. The junction operating temperature range extends from -55°C to +150°C.

Feature Summary

One-pair common cathode diode array configuration for efficient power conversion
Three-tower base-mount package design facilitating robust thermal management
Standard recovery speed characteristics suitable for general industrial applications

Applications

Industrial motor drives and inverters
Uninterruptible power supply (UPS) systems
High-power AC/DC rectification circuits

Procurement Notes

Verify the specific suffix designation, such as 'A' or 'D', against official datasheets to ensure correct pinout and electrical specifications. Confirm RoHS compliance status with the supplier. Ensure proper torque values are applied during installation to maintain thermal interface integrity and mechanical stability within the three-tower mounting structure.

Selection Notes

Select this component for applications requiring high voltage blocking capability and substantial continuous current handling. The standard recovery profile suits non-resonant switching environments. Evaluate thermal resistance requirements to ensure the base-mount package can dissipate heat effectively under peak load conditions without exceeding the maximum junction temperature limit.

Part Context

This module belongs to the MSRT series of discrete semiconductor diodes produced by GeneSiC Semiconductor. The series encompasses various current and voltage ratings tailored for power electronics. The MSRT200140A specifically addresses mid-range high-power requirements within this lineup, offering a balance between current capacity and voltage withstand capability for demanding industrial power stages.