MSRT200160A

$33.15

Description：DIODE MOD GP 1600V 200A 3TOWER
Series：-

SKU:a126047ef50c Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MOD GP 1600V 200A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：1600 V
Current - Average Rectified (Io) (per Diode)：200A (DC)
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 200 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：10 µA @ 600 V
Operating Temperature - Junction：-40°C ~ 175°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MSRT200160A

Overview

The MSRT200160A is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a three-tower package configuration designed for high-power applications. The component is rated for a repetitive peak reverse voltage of 1.6 kV and supports a forward current of 200 A. This device belongs to the MSRT series, utilizing silicon technology for robust performance in industrial power conversion systems.

Feature Summary

High-voltage capability with 1.6 kV reverse voltage rating
High-current handling at 200 A forward current
Standard recovery silicon diode technology
Three-tower module packaging for efficient thermal management

Applications

Industrial motor drives
Power supply units
Inverter circuits

Procurement Notes

Verify the specific manufacturer designation, as some sources list Navitas Semiconductor due to corporate acquisitions. Confirm the exact datasheet version and RoHS compliance status before integration. Ensure the three-tower mounting style matches the target heatsink design. Cross-reference the part number against official GeneSiC or Navitas catalogs to avoid counterfeit components.

Selection Notes

Select this module when high voltage blocking and significant current capacity are required in a compact form factor. The standard recovery characteristic suits general-purpose rectification where switching speed is less critical than ruggedness. Evaluate thermal resistance requirements based on the three-tower layout. Consider the operating temperature range of -55 C to +150 C for harsh environments.

Part Context

This component is part of the MSRT series from GeneSiC Semiconductor, focusing on silicon-based power diodes. The series targets applications needing reliable high-power rectification. The three-tower design distinguishes it from other module types in the portfolio. It serves as a discrete power solution within the broader GeneSiC product line.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official GeneSiC or Navitas Semiconductor channels for direct replacements or obsolescence notifications.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.