MSRT20080AD

MSRT20080AD

$57.01
  • Description:DIODE MODULE GP 800V 200A 3TOWER
  • Series:-

SKU:e989911ae6a6 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MODULE GP 800V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 800 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT20080AD

Overview

The MSRT20080AD is a silicon standard recovery diode module from the MSRT200 series, manufactured by GeneSiC Semiconductor. It features a three-tower isolated package configuration with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 800 V and an average forward current of 200 A per leg. Maximum instantaneous forward voltage is 1.1 V at 200 A, with a maximum thermal resistance of 0.35 °C/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

  • Three-tower package design providing high surge capability
  • Electrically isolated base plate for enhanced safety
  • Standard silicon recovery characteristics

Applications

  • Industrial power conversion systems
  • High-voltage rectification circuits
  • Isolated power supply designs

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm lot traceability and datasheet revision alignment before integration. Ensure storage conditions match specified temperature limits to maintain performance integrity during handling and assembly processes.

Selection Notes

Select this module when high isolation requirements and robust surge handling are necessary. The three-tower architecture facilitates efficient thermal management in compact layouts. Evaluate thermal resistance specifications against system cooling capabilities to ensure reliable operation within the specified temperature range.

Part Context

Part of the MSRT200 series, which includes variants ranging from 600 V to 1000 V reverse voltage ratings. All models share the same three-tower isolated package form factor and electrical isolation characteristics, differing primarily in blocking voltage and specific forward voltage parameters.

Replacement Considerations

Compatible substitutes include MSRT20060AD and MSRT200100AD from the same series. Verify pinout compatibility and thermal resistance values when substituting to ensure equivalent performance in the target application circuit.

MSRT20080ADMSRT20080AD
$57.01
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