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Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 250A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：250A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 250 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：15 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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FAQ
Is the MSRT25060A a standard silicon rectifier?
No, it is a Silicon Carbide (SiC) Schottky Barrier Rectifier.
What package type does the MSRT25060A utilize?
It utilizes an MSMD surface-mount package.
