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The MSRTA200140D is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 1400 V and a DC blocking voltage of 1600 V. It provides an average forward current of 200 A per leg. The maximum instantaneous forward voltage is 1.1 V at 25 °C, and the thermal resistance from junction to case is 0.35 °C/W per leg.
Verify the specific voltage rating suffix against the datasheet table to confirm the 1400 V specification. Ensure the ordering code matches the required isolation type and package dimensions. Confirm availability status as manufacturing schedules may vary. Check for any specific handling requirements related to the heavy three tower construction during installation.
Select this component when a 1400 V rating is required within the MSRTA series range. The 200 A current capacity suits moderate to high power applications. The isolated base plate allows for direct mounting to heatsinks without electrical insulation barriers. Consider the 0.35 °C/W thermal resistance for heat sink sizing calculations.
This part belongs to the MSRTA200XXXD family, covering ratings from 1200 V to 1600 V. It shares the same physical package and thermal characteristics as variants like the MSRTA200120D and MSRTA200160D. The series utilizes standard silicon recovery technology for robust performance in demanding environments.
Direct substitutes include other MSRTA200140D units from the same manufacturer. Cross-referencing with MSRTA200120D or MSRTA200160D requires verifying voltage derating or margin adjustments. Ensure replacement modules maintain the identical terminal configuration and isolation specifications.