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The GeneSiC Semiconductor MSRTA30060D is a silicon standard recovery diode module rated for a repetitive peak reverse voltage of 600 V. It provides an average forward current of 300 A per leg with a maximum instantaneous forward voltage of 0.28 V at Tj = 25 °C and IFM = 300 A. The device features a heavy three tower package with an electrically isolated base plate, offering a maximum thermal resistance from junction to case of 1.1 °C/W. It supports a peak forward surge current of 3800 A (per leg) for 8.3 ms half-sine pulses. Operating temperatures range from -55 °C to +150 °C.
Verify the specific voltage rating suffix, as the MSRTA300 series includes variants up to 1000 V. Confirm the manufacturer source, as GeneSiC assets are managed by Navitas Semiconductor following acquisition. Check for end-of-life status or discontinuation notices prior to finalizing procurement plans.
Select this component when a 600 V blocking voltage is required alongside 300 A continuous current handling. The isolated base plate simplifies heatsinking in multi-phase designs. Ensure the application does not require ultra-fast recovery characteristics, as this is a standard recovery device.
This module belongs to the MSRTA300XXD family, which spans voltage ratings from 600 V to 1000 V. All variants share the same 300 A per leg current rating and physical package dimensions. The 'D' suffix typically denotes the standard recovery type within this product line.
Direct substitutes include other MSRTA30060D units from authorized distributors. Cross-brand replacements must match the 600 V VRRM, 300 A IF(AV), and Three Tower Iso package footprint.