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Product Detailed Parameters
- Description：DIODE MOD GP 1600V 400A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1600 V
- Current - Average Rectified (Io) (per Diode)：400A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 400 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRTA400160A is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three-tower package designed for base mounting applications. The device supports a repetitive peak reverse voltage of 1600 V and a continuous forward current of 400 A. Key electrical characteristics include a maximum DC blocking voltage of 1600 V, a forward voltage of 1.2 V at 400 A, and a thermal resistance from junction to case of 0.14 °C/W. The operating temperature range extends from -40°C to 175°C.
Feature Summary
- Heavy three-tower package construction for robust mechanical stability
- High surge current capability for demanding power environments
- Silicon standard recovery technology optimized for general power applications
Applications
- Industrial power conversion systems
- Motor drive rectification circuits
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific part number suffix against official manufacturer documentation to confirm exact rating configurations. Ensure compatibility with existing thermal management solutions given the specified junction-to-case thermal resistance. Confirm that the heavy three-tower package dimensions align with the intended chassis or heatsink interface requirements before finalizing procurement orders.
Selection Notes
Select this component when high voltage blocking capabilities up to 1600 V are required alongside substantial continuous current handling. The silicon standard recovery characteristic suits applications where ultra-fast switching is not critical but high reliability and surge tolerance are paramount. Evaluate the thermal resistance value against the system's cooling capacity to ensure safe operation within the specified temperature limits.
Part Context
This module belongs to the MSRTA400 series, which includes variants with different voltage ratings such as 1200 V and 1400 V. All members share the same 400 A current rating and physical package style. The series is designed for high-power industrial applications requiring durable, base-mounted diode solutions with proven silicon performance characteristics.
Replacement Considerations
Direct substitutes within the same series include MSRTA400120(A) and MSRTA400140(A), provided lower voltage ratings are acceptable. Cross-manufacturer replacements must match the 400 A current, 1600 V voltage, and three-tower package footprint. Verify thermal resistance and forward voltage specifications to ensure equivalent circuit performance.
FAQ
What is the maximum repetitive peak reverse voltage for the MSRTA400160A?
The maximum repetitive peak reverse voltage (VRRM) is 1600 V.
What is the thermal resistance from junction to case?
The thermal resistance (RthJC) is 0.14 °C/W.
Does this module use silicon or silicon carbide technology?
It utilizes silicon standard recovery diode technology.
