ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
MSS20-055-H27 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 1V 100MW H27. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MSS20-055-H27
- Description：RF DIODE SCHOTTKY 1V 100MW H27
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：1V
- Current - Max：35 mA
- Capacitance @ Vr, F：0.32pF @ 0V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：100 mW
- Operating Temperature：-65°C ~ 150°C
- Package / Case：H27
- Supplier Device Package：H27
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MSS20-055-H27
RF Diode Overview
The MACOM MSS20-055-H27 is a zero-bias Schottky diode packaged in the H27 outline, designed for microwave detector applications up to 40 GHz. Fabricated on P-type epitaxial substrates, it provides superior 1/f noise performance. Key electrical specifications include a maximum junction capacitance of 0.20 pF and a typical tangential signal sensitivity of -59 dBm at 10 GHz. The device features a maximum video resistance of 6000 Ω and a voltage sensitivity of 8000 mV/mW. Absolute maximum ratings specify a reverse voltage of 1 V, forward current of 35 mA, and an operating temperature range from -65°C to +150°C.
RF Diode Feature Summary
- Superior 1/f noise performance achieved through P-type epitaxial substrate fabrication
- Optimized for high-frequency detector applications extending up to 40 GHz
- Low total capacitance design suitable for sensitive RF detection circuits
RF Diode Applications
- Microwave detector circuits
- RF sensing systems
- Signal detection modules
RF Diode Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm the package outline matches the required application. Confirm absolute maximum ratings such as reverse voltage and power dissipation limits before integration. Ensure soldering temperatures do not exceed specified thresholds to maintain device integrity during assembly processes.
RF Diode Selection Notes
Select this component when low 1/f noise and high sensitivity are critical for frequencies up to 40 GHz. Compare the 0.20 pF maximum junction capacitance against circuit requirements to ensure adequate bandwidth. Evaluate the -59 dBm tangential signal sensitivity to determine suitability for weak signal detection scenarios.
RF Diode Part Context
This part belongs to the MSS20-xxx-x Series of zero-bias Schottky diodes manufactured by MACOM Technology Solutions Inc. The series includes various chip beam lead and packaged devices tailored for different frequency ranges and packaging needs within the microwave spectrum.
RF Diode Replacement Considerations
Consult the MSS20-xxx-x Series datasheet for alternative models with similar electrical characteristics. Verify compatibility regarding package outlines and frequency capabilities before substituting other components in existing designs.
RF Diode FAQ
What is the maximum operating frequency for the MSS20-055-H27?
The device is designed for detector applications up to 40 GHz.
What is the typical tangential signal sensitivity (TSS) at 10 GHz?
The typical TSS is -59 dBm under standard test conditions.
What is the maximum reverse voltage rating?
The absolute maximum reverse voltage rating is 1 V.
Explore related parts through Diodes, Discrete Semiconductor Products, all product categories, ChipApex homepage.
