MSS20-143-B10D

RF Diode Overview

The MSS20-143-B10D is a zero bias Schottky diode from the MSS20 series, designed for microwave detector applications up to 40 GHz. It features very low 1/f noise and is fabricated on P-type epitaxial substrates. The device operates within a temperature range of -65°C to +150°C with an absolute maximum reverse voltage of 1 V and forward current of 35 mA. Electrical specifications at 25°C include a junction capacitance of 0.10 pF (max), tangential signal sensitivity of -59 dBm, video resistance of 2000 Ω (typ) to 6000 Ω (max), and voltage sensitivity of 5000 mV/mW (min).

RF Diode Feature Summary

• Designed for superior 1/f noise performance in microwave zero-bias detector applications.
• Capable of operation in detector applications up to 40 GHz.
• Utilizes P-type epitaxial substrate fabrication for enhanced noise characteristics.

RF Diode Applications

• Microwave detector circuits operating up to 40 GHz.
• Zero-bias detection systems requiring low noise performance.
• High-frequency signal processing applications.

RF Diode Procurement Notes

Verify the specific package outline B10D matches the design requirements. Confirm that the absolute maximum ratings, including the 1 V reverse voltage and 35 mA forward current, align with the circuit's operational limits. Ensure thermal management supports the specified operating temperature range of -65°C to +150°C.

RF Diode Selection Notes

Select this component when low 1/f noise is critical for detector sensitivity. The MSS20-143 variant offers a -59 dBm tangential signal sensitivity, which is higher than the MSS20-142 variant. Consider the 0.10 pF junction capacitance for high-frequency impedance matching. Verify compatibility with the B10D beam lead package for board integration.

RF Diode Part Context

The MSS20-143-B10D belongs to the MSS20 series of zero bias Schottky diodes manufactured by MACOM Technology Solutions. This series includes various chip, beam lead, and packaged devices optimized for different frequency ranges and packaging needs, all sharing the core technology of P-type epitaxial substrates for low-noise performance.

RF Diode Replacement Considerations

The MSS20-142-B10D is a similar beam lead device within the same series but offers lower tangential signal sensitivity (-58 dBm vs -59 dBm). Other variants in the MSS20 series may be considered if different frequency coverage or packaging styles are required.

RF Diode FAQ

What is the maximum operating frequency for the MSS20-143-B10D?

The MSS20-143-B10D is designed for detector applications up to 40 GHz.

What is the typical tangential signal sensitivity (TSS) for this model?

The typical TSS for the MSS20-143-B10D is -59 dBm at 10 GHz.

What is the maximum junction capacitance specified for this device?

The maximum junction capacitance (CJ) for the MSS20-143-B10D is 0.10 pF.